BS616UV4016ECG10 데이터 시트보기 (PDF) - Brilliance Semiconductor
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BS616UV4016ECG10 Datasheet PDF : 10 Pages
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BSI
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
READ CYCLE
BS616UV4016
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
CYCLE TIME : 85ns CYCLE TIME : 100ns
(VCC=1.9~3.6V)
(VCC=1.9~3.6V)
UNITS
MIN. TYP. MAX. MIN. TYP. MAX.
tAVAX
tRC
Read Cycle Time
85
--
-- 100 --
--
ns
tAVQX
tAA
Address Access Time
--
--
85
--
-- 100 ns
tELQV
tBLQV
tACS
tBA(1)
Chip Select Access Time
Data Byte Control Access Time
(CE) --
(LB, UB) --
--
85
--
--
40
--
-- 100 ns
--
50
ns
tGLQV
tOE
Output Enable to Output Valid
--
--
40
--
--
50
ns
tELQX
tCLZ
Chip Select to Output Low Z
(CE) 15
--
--
15
--
--
ns
tBLQX
tBE
Data Byte Control to Output Low Z (LB, UB) 15
--
--
15
--
--
ns
tGLQX
tOLZ
Output Enable to Output Low Z
15
--
--
15
--
--
ns
tEHQZ
tCHZ
Chip Select to Output High Z
(CE) --
--
35
--
--
40
ns
tBHQZ
tBDO
Data Byte Control to Output High Z (LB, UB) --
--
35
--
--
40
ns
tGHQZ
tOHZ
Output Enable to Output High Z
--
--
35
--
--
40
ns
tAVQX
tOH
Data Hold from Address Change
15
--
--
15
--
--
ns
NOTE :
1. tBA is 40ns/50ns(@speed=85ns/100ns) with address toggle; tBA is 85ns/100ns(@speed=85ns/100ns) without address toggle
n SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1 (1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DOUT
READ CYCLE 2 (1,3,4)
CE
LB, UB
DOUT
tACS
tBA
tBE
tCLZ(5)
tCHZ(5)
tBDO
R0201-BS616UV4016
5
Revision 1.3
Sep. 2005
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