BS616UV4016ECG10 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS616UV4016ECG10

Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit

Brilliance Semiconductor 

BSI

READ CYCLE 3 (1, 4)

ADDRESS

OE

CE

LB, UB

DOUT

tRC

tAA

tOE

tOLZ

tCLZ(5) tACS

tBA

tBE

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL.

3. Address valid prior to or coincident with CE transition low.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

BS616UV4016

tOH

tOHZ(5)

tCHZ(1,5)

tBDO

R0201-BS616UV4016

6

Revision 1.3

Sep. 2005

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