BS62LV4001 데이터 시트보기 (PDF) - Brilliance Semiconductor

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BS62LV4001

Low Power/Voltage CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

BSI

BS62LV4001

„ DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC )

PARAMETER

NAME

VIL

VIH

IIL

PARAMETER

Guaranteed Input Low

Voltage(2)

Guaranteed Input High

Voltage(2)

Input Leakage Current

TEST CONDITIONS

Vcc = Max, VIN = 0V to Vcc

Vcc=3.0V

Vcc=5.0V

Vcc=3.0V

Vcc=5.0V

MIN. TYP. (1) MAX.

-0.5

--

0.8

2.0

2.2

--

Vcc+0.2

--

--

1

IOL

VOL

VOH

ICC

ICCSB

ICCSB1

Output Leakage Current

Vcc = Max, CE = VIH, or OE = VIH,

VI/O = 0V to Vcc

--

--

1

Output Low Voltage

Vcc = Max, IOL = 2mA

Vcc=3.0V

--

--

0.4

Vcc=5.0V

Output High Voltage

Vcc = Min, IOH = -1mA

Vcc=3.0V

2.4

--

--

Vcc=5.0V

Operating Power Supply

Current

CE = VIL, IDQ = 0mA, F = Fmax(3)

Vcc=3.0V

Vcc=5.0V

--

--

--

--

20

45

Standby Current-TTL

CE = VIH, IDQ = 0mA

Vcc=3.0V

--

--

1

Vcc=5.0V

--

--

2

CE Њ Vcc-0.2V,

Vcc=3.0V

--

0.25

1.5

Standby Current-CMOS VIN Њ Vcc - 0.2V or VIN Љ 0.2V Vcc=5.0V

--

1.5

15

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/tRC .

„ DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC )

UNITS

V

V

uA

uA

V

V

mA

mA

uA

SYMBOL

PARAMETER

VDR

Vcc for Data Retention

TEST CONDITIONS

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

MIN. TYP. (1) MAX.

1.5

--

--

UNITS

V

ICCDR

Data Retention Current

CE Њ Vcc - 0.2V

VIN Њ Vcc - 0.2V or VIN Љ 0.2V

--

0.1

1

uA

tCDR

Chip Deselect to Data

Retention Time

See Retention Waveform

tR

Operation Recovery Time

0

--

--

ns

TRC (2)

--

--

ns

1. Vcc = 1.5V, TA = + 25OC

2. tRC = Read Cycle Time

„ LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )

Vcc

Vcc

t CDR

Data Retention Mode

VDR ≥ 1.5V

VIH

CE ≥ Vcc - 0.2V

CE

Vcc

tR

VIH

R0201-BS62LV4001

3

Revision 2.5

April 2002

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