BSP324 데이터 시트보기 (PDF) - Infineon Technologies

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BSP324

SIPMOS® Power-Transistor

Infineon Technologies 

Rev. 2.1

SIPMOS Power-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

• Pb-free lead plating; RoHS compliant

x Qualified according to AEC Q101

BSP324

Product Summary

VDS

400 V

RDS(on)

25 Ω

ID

0.17 A

SOT-223

Type

BSP324

Package

PG-SOT223

Pb-free Packaging Tape and Reel Information Marking

Yes Non dry

L6327: 1000 pcs/reel

BSP324

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Continuous drain current

ID

TA=25°C

TA=70°C

Pulsed drain current

TA=25°C

ID puls

Reverse diode dv/dt

dv/dt

IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage

ESD Class (JESD22-A114-HBM)

VGS

Power dissipation

TA=25°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Ptot

Tj , Tstg

Value

Unit

A

0.17

0.14

0.68

6

kV/µs

±20

V

1A (>250V, <500V)

1.8

W

-55... +150

°C

55/150/56

Page 1

2009-08-18

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