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BSP324 데이터 시트보기 (PDF) - Infineon Technologies
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BSP324
SIPMOS® Power-Transistor
Infineon Technologies
BSP324 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
Rev. 2.
1
BSP324
13 Typ. gate charge
V
GS
=
f
(
Q
G
); parameter:
V
DS
,
I
D
= 0.17 A pulsed,
T
j
= 25 °C
BSP324
16
V
12
10
0.2
V
DS max
8
0.5
V
DS max
0.8
V
DS max
6
4
2
0
0
1
2
3
4
5
nC
7
Q
G
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
490
BSP324
V
470
460
450
440
430
420
410
400
390
380
370
360
-60 -20
20
60 100
°C
180
T
j
Page 7
2009-08-18
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