Q67000-S172 데이터 시트보기 (PDF) - Siemens AG
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Q67000-S172 Datasheet PDF : 7 Pages
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BSS 124
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.28
A
0.24
Ptot = 1W
kjli
h
gf
e
d
ID 0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
2
4
6
VGS [V]
c a 2.5
b 3.0
c 3.5
d 4.0
e 4.5
f 5.0
g 5.5
h 6.0
i 7.0
j 8.0
b
k 9.0
l 10.0
a
8 10 V 14
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
90
Ω
a
b
RDS (on) 70
60
50
40
30
20
10
VGS [V] =
ab
c
d
e
f
32.05 3.5 4.0 4.5 5.0 5.5
0
0.00 0.04 0.08 0.12
c
ikhgej
d
f
ghi j k
6.0 7.0 8.0 9.0 10.0
0.16 0.20 A 0.26
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
VDS≥ 2 x ID x RDS(on)max
0.32
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0.30
A
ID
0.24
0.20
S
gfs
0.20
0.16
0.15
0.12
0.08
0.04
0.00
0 1 2 3 4 5 6 7 8 V 10
VGS
0.10
0.05
0.00
0.00
0.05
0.10
0.15
A
0.25
ID
Semiconductor Group
6
12/05/1997
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