BSS 169
Preliminary data
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
VGS = -10 V, ID = 250 µA
Gate threshold voltage
VDS = 3 V, ID = 10 µA
Drain-source cutoff current
VDS = 100 V, VGS = -10 V, Tj = 25 °C
VDS = 100 V, VGS = -10 V, Tj = 125 °C
On-state drain current
VGS = 0 V, VDS = 10 V
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 0 V, ID = 0.05 A
V(BR)DSV
100
VGS(th)
-3
IDSV
-
-
ID(on)
70
IGSS
-
RDS(on)
-
Values
typ.
max.
-
-
-2.5
-1.5
-
1
-
-
200
-
10
100
6
12
Unit
V
µA
mA
nA
Ω
Semiconductor Group
2
May-30-1996