BSS806N(2011) 데이터 시트보기 (PDF) - Infineon Technologies
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BSS806N Datasheet PDF : 9 Pages
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Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSS806N
min.
Values
typ.
Unit
max.
C iss
-
C oss
V GS=0 V, V DS=10 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=10 V, V GS=2.5 V,
-
t d(off)
I D=2.3A, R G=6 Ω
-
tf
-
370
529 pF
118
169
20
29
7.5
- ns
9.9
-
12.0
-
3.7
-
Q gs
-
0.55
- nC
Q gd
V DD=10 V, I D=2.3 A,
-
0.58
-
Qg
V GS=0 to 2.5 V
-
1.7
-
V plateau
-
1.5
-V
IS
I S,pulse
T A=25 °C
V SD
V GS=0 V, I F=2.3 A,
T j=25 °C
t rr
V R=10 V, I F=2.3 A,
Q rr
di F/dt =100 A/µs
-
-
0.5 A
-
-
9.3
-
0.82
1.1 V
-
11
- ns
-
3.3
- nC
Rev 2.3
page 3
2011-07-11
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