BSS806N(2011) 데이터 시트보기 (PDF) - Infineon Technologies
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BSS806N Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
101
14 Typ. gate charge
V GS=f(Q gate); I D=2.3 A pulsed
parameter: V DD
5
BSS806N
4.5
4
3.5
25 °C
3
10 V
100
100 °C
2.5
16 V
4V
125 °C
2
1.5
1
10-1
100
101
102
t AV [µs]
0.5
0
103
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Q gate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
16 Gate charge waveforms
Rev 2.3
25
V GS
24
23
22
21
20
V g s(th)
19
18
17
16
-60
-20
20
60 100 140 180
T j [°C]
Q g(th)
Q gs
page 7
Qg
Q sw
Q gd
Q gate
2011-07-11
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