BSS80 데이터 시트보기 (PDF) - TY Semiconductor

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BSS80

(BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS

TY Semiconductor 

SMD Type

SMD Type

TransistIoCrs

Product specification

BSS80,BSS82

Features

High DC current gain: 0.1mA to 500 mA.

Low collector-emitter saturation voltage.

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Peak collector current

Base current

Peak base current

Total power dissipation,TS = 77

Junction temperature

Storage temperature

Junction - soldering point

Symbol

VCEO

VCBO

VEBO

IC

ICM

IB

IBM

Ptot

Tj

Tstg

RthJS

BSS80 BSS82

40

60

60

5

800

1

100

200

330

150

-65 to +150

220

Unit

V

V

V

mA

A

mA

mA

mW

K/W

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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