Philips Semiconductors
NPN switching transistors
Product specification
BSX62; BSX63
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSX62
BSX63
collector-emitter voltage
BSX62
BSX63
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tcase ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
CONDITIONS
in free air
MIN.
MAX.
UNIT
−
60
V
−
80
V
−
40
V
−
60
V
−
5
V
−
3
A
−
3
A
−
500
mA
−
5
W
−65
+150
°C
−
200
°C
−65
+150
°C
VALUE
200
28
UNIT
K/W
K/W
1997 Jun 19
3