BT139-500 데이터 시트보기 (PDF) - Comset Semiconductors
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BT139-500 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BT139 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VDRM
VRRM
IGT
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Gate trigger current
VGT
Gate trigger voltage
IL
Latching current
IH
ID
VT
dVD/dt
Holding current
Off-state leakage current
On-state voltage
Critical rate of rise of
off-state voltage
dVCOM/dt
Critical rate of rise of change
commutatating current
tgt
Gate controlled turn-on time
BT139-500
ID = 0.1 mA BT139-600
BT139-800
BT139-500
ID = 0.5 mA BT139-600
BT139-800
VD = 12 V
RL = 100 Ω
T2+ G+
T2+ G-
T2- G-
T2- G+
VD = 12 V
RL = 100 Ω
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
VD = 12 V T2+ G-
IGT = 100 mA T2- G-
T2- G+
IT = 200 mA, IGT = 50 mA
VD = VDRM max
Tj = 125°C
IT = 10 A
VDM = 67% VDRMmax
Tj = 125°C
Exponential waveform;
gate open circuit
VD = 400 V; Tj = 95 °C
dIcom/dt = 7.2 A/ms
IT = 16 A
gate open circuit
ITM = 20 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
500 -
-
600 -
-
800 -
500 -
-
-
V
600 -
-
800 -
-
-
- 30
-
-
-
-
30
30
mA
-
- 100
-
- 1.5
-
-
-
-
1.5
1.5
V
-
- 1.8
-
- 60
-
-
-
-
90
60
mA
-
- 90
-
- 50 mA
-
- 0.5 mA
-
- 1.65 V
100 250 - V/µs
- 20 - V/µs
-
2
- µs
26/09/2012
COMSET SEMICONDUCTORS
2|3
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