BTA40 데이터 시트보기 (PDF) - STMicroelectronics
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BTA40 Datasheet PDF : 9 Pages
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BTA40, BTA41, BTB41
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (2)
Rd (2)
ITM = 60 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
1. Minimum IGT is guaranted at 5% of IGT max.
2. for both polarities of A2 referenced to A1
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MAX.
MAX.
Table 5. Thermal resistance
Symbol
Test conditions
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
RD91 (insulated) / TOP3 insulated
TOP3
TOP3 / TOP3 insulated
Value
1.55
0.85
10
5
5
Value
0.9
0.6
50
Unit
V
V
mΩ
µA
mA
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
P(W)
50
40
30
20
10
0
0
IT(RMS)(A)
180°
α
α
5
10
15
20
25
30
35
40
IT(RMS)(A)
45
40
35
30
25
20
15
10
5
0
0
25
BTA40
BTA41
α=180°
BTB41
TC(°C)
50
75
100
125
Figure 3. Relative variation of thermal
impedance versus pulse duration
1.E+00
K=[Zth/Rth]
Zth(j-c)
1.E-01
Zth(j-a)
BTA / BTB41
1.E-02
Figure 4. On-state characteristics (maximum
values)
ITM(A)
400
Tj max.
Vto = 0.85V
Rd = 10 mΩ
100
Tj = Tj max.
Tj = 25°C.
10
1.E-03
1.E-03
1.E-02
1.E-01
tp(s)
1.E+00
1.E+01 1.E+02
1.E+03
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Doc ID 7469 Rev 8
3/9
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