BU1506DX 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BU1506DX Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1506DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES
Collector cut-off current 2
ICES
IEBO
BVEBO
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Rbe
VCEsat
VBEsat
hFE
hFE
VF
Base-emitter resistance
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
IB = 0 A; IC = 100 mA;
L = 25 mH
VEB = 7.5 V
IC = 3.0 A; IB = 0.79 A
IC = 3.0 A; IB = 0.79 A
IC = 0.3 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
IF = 3.0 A
MIN.
-
-
90
7.5
700
-
-
-
-
3.8
-
TYP. MAX. UNIT
-
1.0 mA
-
2.0 mA
-
180 mA
13.5 -
V
-
-
V
55
-
Ω
-
5.0
V
-
1.1
V
12
-
5.5 7.5
1.6 2.0
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc
Collector capacitance
Switching times (line deflection
circuit)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 3.0 A; LC = 1.35 mH;
CFB = 9.4 nF; IB(end) = 0.67 A;
LB = 8 µH; -VBB = 4 V;
(-dIB/dt = 0.45 A/µs)
TYP. MAX. UNIT
47
-
pF
4.5 6.0 µs
0.25 0.5 µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300
Share Link: 