Q67060-S6953A3 데이터 시트보기 (PDF) - Siemens AG
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Q67060-S6953A3 Datasheet PDF : 15 Pages
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Target Data Sheet BTS560
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC7)
junction - ambient (free air): RthJA
Values
min typ max
--
-- 0.40
-- 30
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Values
Unit
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,5, see measurement
circuit page 7)
IL = tbd (>=20) A, Tj = 25 °C: RON
VIN = 0, IL = tbd (>=20) A, Tj = 150 °C:
IL = 150 A, Tj = 150 °C:
Nominal load current8) (Tab to pins 1,5)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 9)
Maximum load current in resistive range
(Tab to pins 1,5)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 12 VON = 1.8 V, Tc = 150 °C:
Turn-on time10)
IIN to 90% VOUT:
Turn-off time
IIN to 10% VOUT:
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 10) (10 to 30% VOUT )
RL = 1 Ω
Slew rate off 10) (70 to 40% VOUT )
RL = 1 Ω
IL(ISO)
IL(Max)
ton
toff
dV/dton
-dV/dtoff
-- 3.3 4.0 mΩ
6.5 7.8
7.9
80 96
-- A
tbd
--
--
tbd
--
-- A
130
-- 550 µs
60
-- 240
-- 0.8
-- V/µs
-- 0.8
-- V/µs
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
VbIN = 12 V, IL = - tbd (>=20) A
Tj = 25 °C:
see diagram on page 9
Tj = 150 °C:
Nominal inverse load current (Pins 1,5 to Tab)
VON = -0.5 V, Tc = 85 °C9
Drain-source diode voltage (Vout > Vbb)
IL = - tbd (>=20) A, IIN = 0, Tj = +150°C
RON(inv)
IL(inv)
-VON
-- 3.3 4.0 mΩ
6.5 7.8
80 96
-- A
-- tbd
-- mV
7) Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included!
8) Not tested, specified by design.
9) TJ is about 105°C under these conditions.
10) See timing diagram on page 13.
Semiconductor Group
Page 3
1998-Jun-17
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