Q67060-S6953A3 데이터 시트보기 (PDF) - Siemens AG
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Q67060-S6953A3 Datasheet PDF : 15 Pages
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Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Target Data Sheet BTS560
Symbol
Values
Unit
min typ max
Input
Input and operating current (see diagram page 12)
IN grounded (VIN = 0)
Input current for turn-off18)
IIN(on)
IIN(off)
--
1
2 mA
--
-- 40 µA
Truth Table
Normal
operation
Very high
load current
Current-
limitation
Short circuit to
GND
Over-
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Input
current
level
L
H
H
H
L
H
L
H
L
H
L
H
L
L
H
Output
level
L
H
H
H
L
L
L
L
H
H
Z20)
H
L
H
H
Current
Sense
IIS
0
nominal
IIS, lim
0
0
0
0
0
0
<nominal 19)
0
0
0
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occure
0
0
L = "Low" Level
H = "High" Level
Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 13)
18) We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
19) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
20) Power Transistor "OFF", potential defined by external impedance.
Semiconductor Group
Page 6
1998-Jun-17
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