Q67060-S6953A3 데이터 시트보기 (PDF) - Siemens AG
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Q67060-S6953A3 Datasheet PDF : 15 Pages
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Target Data Sheet BTS560
Inverse load current operation
V bb
+
-
VIN
Vbb
- IL
IN PROFET OUT
IS
IIS
VIS
R IS
VOUT +
-
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense
feature is not available during this kind of operation (IIS
= 0). With IIN = 0 (e.g. input open) only the intrinsic
drain source diode is conducting resulting in consi-
derably increased power dissipation. If the device is
switched on (VIN = 0), this power dissipation is
decreased to the much lower value RON(INV) * I2
(specifications see page 3).
Note: Temperature protection during inverse load
current operation is not possible!
Energy stored in load inductance:
EL = 1/2·L·I2L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS= 2IL·R· LL(Vbb + |VOUT(CL)|)
ln
(1+
IL·RL
|VOUT(CL)|
)
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
L [mH]
10000
1000
Inductive load switch-off energy
dissipation
E bb
E AS
V bb
V bb
i L(t)
IN PROFET OUT
IS
L
I IN
RIS
{Z L RL
ELoad
EL
ER
100
10
1
0 2.5 5 7.5 10 12.5 15
IL [A]
Semiconductor Group
Page 9
1998-Jun-17
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