Q67060-S6072-A101(2003) 데이터 시트보기 (PDF) - Infineon Technologies
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Q67060-S6072-A101 Datasheet PDF : 15 Pages
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Data sheet BTS 6133 D
Reversave (Reverse battery protection)
-Vbb
R bb
IN
R IN
Logic
OUT
Power
Transistor
Note: Temperature protection during inverse load
current operation is not possible!
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL+VD<39 V if
RIN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
Version a:
RL
V
bb
D
R IS
Signal GND
Power GND
RIS typ. 1 kΩ. Add RIN for reverse battery protection in
applications with Vbb above 16V;
11
0.08 A
recommended value: RIN + RIS = | Vbb | −12V
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through RIS.
Since the current via Rbb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inversave (Inverse current operation)
V bb
IN PROFET OUT
IS
VD
VZL
Vbb
+
Vbb
- IL
IN PROFET OUT
-
VIN
IS
IIS
VIS
R IS
VOUT +
-
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS= IIS(LH)).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), the power dissipation is decreased to the
much lower value RON(INV) * I2 as long as a maximum
current IL(inv) is not exceeded(see on p4).
Infineon Technologies AG
10 of 15
2003-Oct-01
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