BU1006A5S-E3/45 데이터 시트보기 (PDF) - Vishay Semiconductors
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BU1006A5S-E3/45 Datasheet PDF : 5 Pages
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BU1006A, BU1008A, BU1010A
Vishay General Semiconductor
1000
100
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+ ~~ -
0.085 (2.16)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
0.161 (4.10)
0.142 (3.60)
9°
TYP.
View A
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
0.055 (1.385) REF.
0.64 (16.28) REF.
R 0.11
(2.78) REF.
0.094 (2.39) x 45° REF.
0.028 (0.72)
0.020 (0.52)
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 29-Aug-17
3
Document Number: 84800
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