BU2506AX 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BU2506AX

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BU2506AX

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=3.0A ;IB=0.79 A

VBEsat

Base-emitter saturation voltage

ICES

Collector cut-off current

IEBO

Emitter cut-off current

IC=3.0A ;IB=0.79 A

VCE=BVCES; VBE=0

TC=125

VEB=7.5V; IC=0

hFE-1

DC current gain

IC=0.3 A ; VCE=5V

hFE-2

DC current gain

IC=3.0A ; VCE=5V

MIN TYP. MAX UNIT

700

V

7.5

V

5.0

V

1.1

V

1.0

2.0

mA

0.1

mA

12

3.8

5.5

7.5

2

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