PDM34078SA10QI 데이터 시트보기 (PDF) - Paradigm Technology

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PDM34078SA10QI

3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register

Paradigm Technology 

PDM34078

Recommended DC Operating Conditions

Symbol

Description

VCC

VCCQ

VSS

Commercial

Supply Voltage

Supply voltage

Supply Voltage

Ambient Temperature

Min.

Typ.

Max.

Unit

1

3.0

3.3

3.6

V

3.0

3.3

3.6

V

0

0

0

V

0

25

70

°C

2

3

DC Electrical Characteristics (VCC = 3.3V ± 0.3V, All Temperature Ranges)

Symbol

|ILI|

|ILO|

VOL

VOH

VIH

VIL

Description

Input Leakage Current

Output Leakage Current

Output Low Voltage

Output High Voltage

Input HIGH Voltage

Input LOW Voltage(1)

Test Conditions

VIN = 0V to VCC

Outputs Disabled, VI/O = 0V to VCC

VCC = Min., IOL = 8 mA

VCC = Min., IOH = –5 mA

Min.

Max.

Unit

–2

2

µA

4

–2

2

µA

—

0.4

V

2.4

—

V

5

2.0 Vcc+0.3 V

–0.3

0.8

V

NOTES: 1. Undershoots to –2.0 for 10 ns are allowed once per cycle.

2. MODE, FT and ZZ pins have an internal pullup and exhibit an input leakage current of ±400 µA.

6

Power Supply Characteristics

Symbol Description

ICC

Active Supply Current

ISB

Standby Current:

ISB1

Standby Current:

ISB2

Standby Current:

ISB3

Sleep Mode

Standby Current:

Test Conditions

Device Deselected

VIN ≤ VIL or ≥ VIH, II/O = 0

Device Deselected

VIN ≤ VIL or ≥ VIH, 0 MHz

All inputs static

Device Deselected

VIN ≤ 0.2V or ≥ VCC – 0.2V

All inputs static, 0 MHz

Device Deselected

VIN ≤ VIL or ≥ VIH,

All inputs static

Device Deselected

ZZ ≥ VCCQ – 0.2V

7

-6 ns

350

-7 ns

300

-8 ns -10 ns -12 ns Unit

250 230 210 mA

20

20

20

20

20

mA

3

3

3

3

3

mA

60

55

50

45

40

mA

8

9

10

3

3

3

3

11 3

mA

12

Rev 1.0 - 5/01/98

7

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