BUJ103A 데이터 시트보기 (PDF) - Philips Electronics

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BUJ103A

Silicon Diffused Power Transistor

Philips Electronics 

Philips Semiconductors

Silicon Diffused Power Transistor

Product specification

BUJ103A

IC (A)

9

8

7

6

5

4

3

2

1

0

0

100

200

300

400

500

600

VCEclamp (V)

700

800

900

Fig.13. Reverse bias safe operating area Tj ≤ Tjmax

VCC

IC (A)

100

Icm max10

Ic max

1

0.1

0.01

Duty Cycle = 0.01

II

(1)

(2)

I

tp =

20us

50us

100us

200us

500us

DC

III

IBon

-VBB

LC

VCL

LB

T.U.T.

Fig.14. Test Circuit for reverse bias safe operating

area.

Vcl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH;

Lc = 200µH

Fig.15.

0.001

1

10

100

1,000

VCEclamp (V)

Forward bias safe operating area. Ths ≤ 25 ˚C

(1) Ptot max and Ptot peak max lines.

(2) Second breakdown limits.

I

Region of permissible DC operation.

II

Extension for repetitive pulse operation.

III Extension during turn-on in single

transistor converters provided that

RBE ≤ 100 Ω and tp ≤ 0.6 µs.

NB: Mounted with heatsink compound and

30 ± 5 newton force on the centre of the

envelope.

August 1998

5

Rev 1.000

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