BUK9528-100A 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BUK9528-100A Datasheet PDF : 9 Pages
| |||
Philips Semiconductors
TrenchMOS transistor
Logic level FET
Product specification
BUK9528-100A
BUK9628-100A
AVALANCHE LIMITING VALUE
SYMBOL
WDSS1
PARAMETER
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 30 A; VDD ≤ 25 V;
VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
MIN. TYP. MAX. UNIT
-
-
45 mJ
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tmb)
ID%
120
110
100
Normalised Current Derating
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V
1000
ID/A
RDS(ON)=VDS/ID
100
tp =
1us
10us
100us
10
1ms
DC
10ms
100ms
1
1
10
100
1000
VSD/V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth/(K/W)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
0.001
1E-07
1E-05
1E-03
t/s
1E-01
1E+01
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1 For maximum permissible repetive avalanche current see fig.18.
March 2000
3
Rev 1.000
Share Link: 