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BUK9528-100A 데이터 시트보기 (PDF) - Philips Electronics

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BUK9528-100A
Philips
Philips Electronics Philips
BUK9528-100A Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Philips Semiconductors
TrenchMOStransistor
Logic level FET
Product specification
BUK9528-100A
BUK9628-100A
60
ID/A
50
VGS/V =
5.0 4.0
10.0
3.8
3.6
3.4
40
3.2
3.0
30
2.8
20
2.6
10
2.4
2.2
0
0
2
4
6
8
10
VDS/V
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
65
3.0
60
55
50
3.2
45
3.4
40
3.6
3.8
4.0
35
5.0
30
25
5
15
25
35
45
55
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); paramter VGS
RDS(ON) Ohm
23
22
21
20
19
18
17
16
15
3
4
5
6
7
8
9
10
VGS/V
Fig.7. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(VGS); conditions: ID = 25 A;
25
ID/A
20
15
10
5
0
0.0
Tj/C= 175
25
2.0
4.0
6.0
VGS/V
Fig.8. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
100
gfs/S90
80
70
60
50
40
30
20
10
0
0
20
40 ID/A 60
80
100
Fig.9. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
3a
Rds(on) normalised to 25degC
2.5
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.10. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
March 2000
4
Rev 1.000

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