BUK9528-100A 데이터 시트보기 (PDF) - Philips Electronics
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BUK9528-100A Datasheet PDF : 9 Pages
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Philips Semiconductors
TrenchMOS transistor
Logic level FET
Product specification
BUK9528-100A
BUK9628-100A
VGS(TO) / V
2.5
max.
2
typ.
1.5
min.
1
0.5
0
-100
-50
0
50
Tj / C
100
150
200
Fig.11. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-05
0
0.5
1
1.5
2
2.5
3
Fig.12. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.01
0.1
1
10
VDS/V
Ciss
Coss
Crss
100
Fig.13. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
5
VGS / V
4
3
VDS = 14V
VDS = 44V
2
1
0
0
10
20
30
40
50
60
QG / nC
Fig.14. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 25 A; parameter VDS
100
90
IF/A
80
70
60
Tj/C= 175oC
50
25oC
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSDS/V
Fig.15. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.16. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 75 A
March 2000
5
Rev 1.000
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