Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW13W; BUW13AW
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Switching times resistive load (see Figs 11 and 12)
ton
turn-on time
BUW13W
BUW13AW
ts
storage time
BUW13W
BUW13AW
tf
fall time
BUW13W
BUW13AW
ICon = 10 A; IBon = −IBoff = 2 A
−
ICon = 8 A; IBon = −IBoff = 1.6 A −
ICon = 10 A; IBon = −IBoff = 2 A
−
ICon = 8 A; IBon = −IBoff = 1.6 A −
ICon = 10 A; IBon = −IBoff = 2 A
−
ICon = 8 A; IBon = −IBoff = 1.6 A −
Switching times inductive load (see Figs 13 and 14)
ts
storage time
BUW13W
BUW13AW
tf
fall time
BUW13W
BUW13AW
ICon = 10 A; IB = 2 A
−
ICon = 10 A; IB = 2 A; Tj = 100 °C −
ICon = 8 A; IB = 1.6 A
−
ICon = 8 A; IB = 1.6 A;
−
Tj = 100 °C
ICon = 10 A; IB = 2 A
−
ICon = 10 A; IB = 2 A; Tj = 100 °C −
ICon = 8 A; IB = 1.6 A
−
ICon = 8 A; IB = 1.6 A;
−
Tj = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
−
1
µs
−
1
µs
−
4
µs
−
4
µs
−
0.8
µs
−
0.8
µs
2.3 3
µs
2.5
3.2
µs
2.3 3
µs
2.5
3.2
µs
80
150 ns
140 300 ns
80
150 ns
140 300 ns
1997 Aug 13
3