BUV40 데이터 시트보기 (PDF) - Inchange Semiconductor

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BUV40

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUV40

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH

125

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

7

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5.5A; IB= 0.275A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 11A ;IB=B 1.1A

VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 15A ;IB= 1.875A

VBE(sat)-1 Base-Emitter Saturation Voltage

IC= 11A ;IB=B 1.1A

VBE(sat)-2 Base-Emitter Saturation Voltage

ICER

Collector Cutoff Current

ICEV

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 15A ;IB= 1.875A

VCE= 250V;RBE= 10Ω

VCE= 250V;RBE= 10Ω;TC=100℃

VCE= 250V;VBE= -1.5V

VCE= 250V;VBE= -1.5V;TC=100℃

VEB= 5V; IC= 0

0.8

V

0.9

V

1.2

V

1.6

V

1.9

V

1.0

5.0

mA

1.0

5.0

mA

1.0 mA

Switching Times, Resistive Load

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= 15A; IB1= 1.8A; VCC= 100V;

RB2= 1.3Ω; VBB= -5V, tp= 30μs

1.0 μs

1.0 μs

0.3 μs

isc Website：www.iscsemi.cn

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