BUV41 데이터 시트보기 (PDF) - Inchange Semiconductor
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BUV41 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUV41
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V (Max.) @IC= 3A
·High Switching Speed
APPLICATIONS
·Designed for high current, high speed, high power
applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage
VBE=-1.5V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IBB
Base Current-Continuous
IBM
Base Current- Peak
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
300
V
200
V
7
V
15
A
20
A
3
A
5
A
120
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case 1.46 ℃/W
isc Website：www.iscsemi.cn
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