BUX40A 데이터 시트보기 (PDF) - Inchange Semiconductor

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BUX40A

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUX40A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.88A

VBE(sat) Base-Emitter Saturation Voltage

IC= 15A; IB= 1.88A

ICEO

Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO

Emitter Cutoff Current

VCE= 100V;IB= 0

VCE= 160V;VBE= -1.5V

VCE= 160V;VBE= -1.5V; TC= 125℃

VEB= 5V; IC=0

hFE-1

DC Current Gain

IC= 10A ; VCE= 4V

hFE-2

DC Current Gain

IC= 15A ; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; ftest= 10MHz

MIN TYP. MAX UNIT

125

V

1.2 V

1.6 V

2.0 V

3.0 mA

3.0

12

mA

1.0 mA

15

45

8

50

MHz

isc Website：www.iscsemi.cn

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