BUV27 데이터 시트보기 (PDF) - Comset Semiconductors
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BUV27 Datasheet PDF : 3 Pages
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SEMICONDUCTORS
BUV27 – BUV27A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
ICEX
IEBO
VCEOsust
VEBO
VCE(SAT)
VBE(SAT)
Collector Cutoff
Current (*)
Emitter Cutoff
Current
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
saturation Voltage
Base-Emitter
Saturation Voltage
VCE =VCESMax
BUV27
VBE= 1.5V, TJ= 125°C BUV27A
VEB= 5 V, IC= 0
BUV27
BUV27A
IB= 0 , IC= 0.2 A
L = 25 mH
BUV27
BUV27A
IE= 50 mA , IC= 0
BUV27
BUV27A
IC= 4 A, IB= 400 mA
IC= 4 A, IB= 400 mA
IC=8 A, IB= 0.8 A
BUV27
BUV27A
BUV27
IC=7 A, IB= 0.7 A
IC=8 A, IB= 0.8 A
BUV27A
BUV27
IC=7 A, IB= 0.7 A
BUV27A
Value
Unit
Min Typ Max
-
-
1 mA
-
-
1 mA
120 -
150 -
-
-
V
7
- 30 V
-
- 0.7
-
-
-
-
0.7
1.5
V
-
- 1.5
-
-
-
-
2
2
V
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
ton
turn-on time
toff
turn-off time
tf
Fall time
For BUV27
IC= 8 A , VCC= 50 V
IB1 = 0.8 A , IB2 = 1.6 A
For BUV27A
IC= 7 A , VCC= 50 V
IB1 = 0.7 A , IB2 = 1.4 A
BUV27
BUV27A
BUV27
BUV27A
BUV27
BUV27A
(*) Mesured with a half-sinewave voltage (curve tracer).
Value
Unit
Min Typ Max
- 0.4 0.8
- 0.5 1.2 µs
- 0.12 0.25
29/09/2012
COMSET SEMICONDUCTORS
23
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