BUX41N 데이터 시트보기 (PDF) - Comset Semiconductors
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BUX41N Datasheet PDF : 3 Pages
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NPN BUX41N
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
VCEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
IC= 200 mA
160 -
-
V
VEBO
ICEO
ICEX
IEBO
hFE
VCE(SAT)
VBE(SAT)
Emitter-Base Voltage
IC= 0 A, IE= 50 mA
7
-
-
V
Collector Cutoff Current
VCE= 130 V, IB= 0 A
-
-
1 mA
VCE= 220 V, VBE= -1.5 V -
-
1
Collector Cutoff Current
VCE= 220 V, VBE= -1.5 V
Tcase = 125°C
-
-
5 mA
Emitter Cutoff Current
VEB= 5.0 V, IC= 0 A
-
-
1 mA
DC Current Gain (*)
IC= 8 A, VCE= 4.0 V
IC= 12 A, VCE= 4.0 V
15
8
-
-
45
-
-
Collector-Emitter saturation
IC= 8 A, IB= 0.8 A
- 0.5 1.2
Voltage (*)
IC= 12 A, IB= 1.5 A
Base-Emitter saturation Voltage
(*)
IC= 12 A , IB= 1.5 A
- 0.75 1.6 V
- 1.5 2
IS/B
Second breakdown collector
current
VCE= 30 V, ts = 1s
VCE= 100 V, ts = 1s
4
-
0.27 -
-
-
A
ES/B
Clamped ES/B Collector current
Vclamp= 160 V
L= 500 µH
12 -
-
A
fT
Transition frequency
VCE= 15 V, IC= 1 A
f= 10 MHz
8
-
- MHz
ton
Turn-on time
IC= 12 A, IB= 1.5 A
VCC= 30 V
- 0.35 1.3
ts
Storage time
tf
File time
IC= 12 A, VCC= 30 V
IB1 = -IB2 = 1.5 A
- 0.85 1.5 µs
- 0.14 0.8
(*) Pulse Duration = 300 µs, Duty Cycle <= 2%
01/10/2012
COMSET SEMICONDUCTORS
2/3
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