BYD33 데이터 시트보기 (PDF) - Philips Electronics

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BYD33

Fast soft-recovery controlled avalanche rectifiers

Philips Electronics 

Philips Semiconductors

Fast soft-recovery

controlled avalanche rectifiers

Product specification

BYD33 series

SYMBOL

PARAMETER

IFRM

repetitive peak forward current

BYD33D to M

BYD33U and V

IFSM

non-repetitive peak forward current

ERSM

Tstg

Tj

non-repetitive peak reverse

avalanche energy

BYD33D to J

BYD33K to V

storage temperature

junction temperature

CONDITIONS

Tamb = 65 °C; see Figs 8 and 9

t = 10 ms half sine wave;

Tj = Tj max prior to surge;

VR = VRRMmax

L = 120 mH; Tj = Tj max prior to

surge; inductive load switched off

see Figs 12 and 13

MIN. MAX. UNIT

−

7A

−

6A

−

20 A

−

10 mJ

−

7 mJ

−65

+175 °C

−65

+175 °C

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

V(BR)R

IR

reverse avalanche breakdown

voltage

BYD33D

BYD33G

BYD33J

BYD33K

BYD33M

BYD33U

BYD33V

reverse current

trr

reverse recovery time

BYD33D to J

BYD33K and M

BYD33U and V

Cd

diode capacitance

CONDITIONS

IF = 1 A; Tj = Tj max;

see Figs 14 and 15

IF = 1 A;

see Figs 14 and 15

IR = 0.1 mA

VR = VRRMmax;

see Fig.16

VR = VRRMmax;

Tj = 165 °C; see Fig.16

when switched from

IF = 0.5 A to IR = 1 A;

measured at IR = 0.25 A

see Fig.21

f = 1 MHz; VR = 0 V;

see Figs 17 and 18

MIN.

−

−

300

500

700

900

1 100

1 300

1 500

−

−

−

−

−

−

TYP.

−

−

−

−

−

−

−

−

−

−

−

−

−

−

20

MAX. UNIT

1.1 V

1.3 V

−V

−V

−V

−V

−V

−V

−V

1 µA

100 µA

250 ns

300 ns

500 ns

− pF

1996 Sep 18

3

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