Philips Semiconductors
Ultra-fast soft-recovery
controlled avalanche rectifiers
Product specification
BYD57 series
SYMBOL
PARAMETER
-d-d--I--tR--
maximum slope of reverse recovery
current
BYD57D to J
BYD57K and M
BYD57U and V
CONDITIONS
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = −1 A/µs;
see Fig.19
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
7 A/µs
6 A/µs
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
30
K/W
150
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.17.
For more information please refer to the ‘General Part of associated Handbook’.
1999 Nov 11
4