Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYM26 series
SYMBOL
PARAMETER
CONDITIONS
IFRM
repetitive peak forward current
Ttp = 55 °C; see Figs 6 and 7
BYM26A to E
BYM26F and G
IFRM
repetitive peak forward current
Tamb = 65 °C; see Figs 8 and 9
BYM26A to E
BYM26F and G
IFSM
ERSM
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
Tstg
storage temperature
Tj
junction temperature
see Figs 12 and 13
MIN.
−
−
−
−
−
−
−65
−65
MAX. UNIT
19 A
21 A
8.0 A
8.5 A
45 A
10 mJ
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
VF
V(BR)R
IR
forward voltage
BYM26A to E
BYM26F and G
forward voltage
BYM26A to E
BYM26F and G
reverse avalanche breakdown
voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
reverse current
trr
reverse recovery time
BYM26A to C
BYM26D and E
BYM26F and G
CONDITIONS
IF = 2 A; Tj = Tj max;
see Figs 14 and 15
IF = 2 A;
see Figs 14 and 15
IR = 0.1 mA
VR = VRRMmax;
see Fig.16
VR = VRRMmax;
Tj = 165 °C; see Fig.16
when switched from
IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A;
see Fig.20
MIN. TYP. MAX. UNIT
−
−
1.34 V
−
−
1.34 V
−
−
2.65 V
−
−
2.30 V
300
−
500
−
700
−
900
−
1 100
−
1 300
−
1 500
−
−
−
−V
−V
−V
−V
−V
−V
−V
10 µA
−
−
150 µA
−
−
30 ns
−
−
75 ns
−
−
150 ns
1996 May 24
3