Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYM26 series
SYMBOL
PARAMETER
CONDITIONS
Cd
diode capacitance
BYM26A to C
f = 1 MHz; VR = 0 V;
see Figs 17 and 18
BYM26D and E
BYM26F and G
-d-d--I--tR--
maximum slope of reverse recovery when switched from
current
IF = 1 A to VR ≥ 30 V and
BYM26A to C
dIF/dt = −1 A/µs;
see Fig.21
BYM26D and E
BYM26F and G
MIN.
−
−
−
−
−
−
TYP. MAX. UNIT
85
− pF
75
− pF
65
− pF
−
7 A/µs
−
6 A/µs
−
5 A/µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
25
K/W
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.19.
For more information please refer to the “General Part of associated Handbook”.
1996 May 24
4