DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BYM36E 데이터 시트보기 (PDF) - Philips Electronics

부품명
상세내역
제조사
BYM36E Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
Fast soft-recovery
controlled avalanche rectifiers
Product specification
BYM36 series
SYMBOL
PARAMETER
CONDITIONS
IFRM
repetitive peak forward current
Ttp = 55 °C; see Figs 8; 9 and 10
BYM36A to C
BYM36D and E
BYM36F and G
IFRM
repetitive peak forward current
Tamb = 65 °C; see Figs 11; 12 and 13
BYM36A to C
BYM36D and E
BYM36F and G
IFSM
ERSM
non-repetitive peak forward current
non-repetitive peak reverse
avalanche energy
t = 10 ms half sine wave; Tj = Tj max
prior to surge; VR = VRRMmax
L = 120 mH; Tj = Tj max prior to surge;
inductive load switched off
Tstg
storage temperature
Tj
junction temperature
see Figs 17 and 18
MIN.
65
65
MAX. UNIT
37 A
33 A
27 A
13 A
11 A
10 A
65 A
10 mJ
+175 °C
+175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
VF
V(BR)R
IR
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
forward voltage
BYM36A to C
BYM36D and E
BYM36F and G
reverse avalanche breakdown
voltage
BYM36A
BYM36B
BYM36C
BYM36D
BYM36E
BYM36F
BYM36G
reverse current
CONDITIONS
IF = 3 A; Tj = Tj max;
see Figs 19; 20 and 21
IF = 3 A;
see Figs 19; 20 and 21
IR = 0.1 mA
VR = VRRMmax; see Fig.22
VR = VRRMmax;
Tj = 165 °C; see Fig.22
MIN.
300
500
700
900
1 100
1 300
1 500
TYP.
MAX. UNIT
1.22 V
1.28 V
1.24 V
1.60 V
1.78 V
1.57 V
V
V
V
V
V
V
V
5 µA
150 µA
1996 Sep 18
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]