BYV32E-150 데이터 시트보기 (PDF) - Philips Electronics
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BYV32E-150 Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV32E, BYV32EB series
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% 100%
Fig.1. Definition of trr1, Qs and Irrm
0.5A
IF
0A
I rec = 0.25A
IR
trr2
I = 1A
R
Fig.4. Definition of trr2
IF
time
VF
VF
Fig.2. Definition of Vfr
V fr
time
R
Voltage Pulse Source
D.U.T.
Current
shunt
to ’scope
Fig.3. Circuit schematic for trr2
PF / W
15
Vo = 0.7 V
Rs = 0.0183 Ohms
BYV32
Tmb(max) / C
114
D = 1.0
0.5
10
126
0.2
0.1
5
I
tp
D
=
tp
T
138
T
t
0
150
0
5
10
15
IF(AV) / A
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
PF / W
10
Vo = 0.7 V
Rs = 0.0183 Ohms
8
6
BYV32
2.8
Tmb(max) / C
126
1.9
2.2
a = 1.57
130.8
4
135.6
4
140.4
2
145.2
0
150
0
2
4
6
8
10
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
August 2001
3
Rev 1.300
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