BYV32E-150 데이터 시트보기 (PDF) - Philips Electronics
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BYV32E-150 Datasheet PDF : 7 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast, rugged
trr / ns
1000
100
10
IF=10A
IF=1A
1
1
10
100
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
1
0.1
IF=10A
IF=1A
0.01
1
10
100
-dIF/dt (A/us)
Fig.8. Maximum Irrm at Tj = 25 ˚C; per diode
30 IF / A
Tj=150 C
Tj=25 C
20
10
typ
max
0
0
0.5
1
1.5
VF / V
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter Tj
Product specification
BYV32E, BYV32EB series
100 Qs / nC
10
IF=10A
5A
2A
1A
1.0
1.0
10
100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
T
t
10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
BYV32E
Fig.11. Transient thermal impedance; per diode;
Zth j-mb = f(tp).
August 2001
4
Rev 1.300
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