BYV26DGP 데이터 시트보기 (PDF) - Vishay Semiconductors
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BYV26DGP Datasheet PDF : 5 Pages
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100
TJ = TJ Max.
10 ms Single Half Sine-Wave
10
BYV26DGP, BYV26EGP
Vishay General Semiconductor
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
1
10
100
Number of Cycles at 60 Hz
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
100
TJ = 175 °C
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Instantaneous Forward Voltage Characteristics
100
TJ = 175 °C
10
1
TJ = 165 °C
TJ = 125 °C
0.1
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Leakage Characteristics
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
100
10
1
0.01
Mounted on P.C.B.
0.375" (9.5 mm) Lead Length on
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads
0.1
1
10
100
t - Pulse Duration (s)
Fig. 7 - Typical Transient Thermal Impedance
Document Number: 88554 For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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