BYW29F 데이터 시트보기 (PDF) - Philips Electronics
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BYW29F Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYW29F series
ISOLATION
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Visol
Repetitive peak voltage from
both terminals to external
heatsink
Cisol
Capacitance from cathode to
external heatsink
CONDITIONS
R.H. ≤ 65% ; clean and dustfree
MIN. TYP. MAX. UNIT
-
- 1500 V
f = 1 MHz
-
12
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.3
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
CONDITIONS
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C;
-dIF/dt = 50 A/µs
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
1
1
MAX. UNIT
11 nC
25 ns
2
A
-
V
October 1994
2
Rev 1.100
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