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RTPA5250-130(2001) 데이터 시트보기 (PDF) - Raytheon Company

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RTPA5250-130
(Rev.:2001)
Raytheon
Raytheon Company Raytheon
RTPA5250-130 Datasheet PDF : 12 Pages
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RTPA5250-130
3.3V UNII Band Power Amplifier
MMIC/Switch Module for WLAN ADVANCED INFORMATION
Application
Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RTPA5250-130, power amplifier / switch module, in a
leadless package. The package outline and the pin designations are shown in Figure 1. The functional block
diagram of the packaged product is provided in Figure 2. It should be noted that RTPA5250-130 requires very
minimal external passive components for DC bias and no external components for RF matching circuits. Figure 3
shows the switch logic control table. Figure 4 shows a typical layout of an evaluation board. The module contains
the MMIC with bias decoupling components. The following designations, shown in Figure 1 should be noted:
(1 Vdd is the Supply voltage.
(2) Vee is the Logic Control voltage.
(3) Vab is the Active Bias Control voltage.
Figure 1
Package
Information
Dimensions in inches
Pin # Description
1
XMT
2
GND
3
Vab
4
Vdd
5
GND
6
ANT1
7
GND
8
ANT2
9
GND
10 RCV
11 GND
12 Vee
13 Vdd
14 XMT/RCV Control
15 ANT1/2 Control
16 GND
Figure 2
Functional Block
Diagram
ANT1
Pin 6
XMT
Pin 1
Vdd
Pin 5,13
ANT1/2 Control
Pin15
50
AMP
S2
ANT2
Pin 8
RCV
Pin10
50
S1
www.raytheon.com/micro
Vab
Pin 3
Vee XMT/RCV Control
GND
Pin 12
Pin14
Pin 2, 4, 7, 9, 11,16
Characteristic performance data and specifications are subject to change without notice.
Revised August 22, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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