BZG04-100TR 데이터 시트보기 (PDF) - Vishay Semiconductors
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BZG04-100TR Datasheet PDF : 5 Pages
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BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• High reliability
e3
• Stand-off Voltage range 8.2 V to 220 V
• Excellent clamping cabability
• Fast response time (typ. ≤ 1 ps from 0 to VZmin)
• Lead (Pb)-free component
15811
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC
Weight: approx. 77 mg
Packaging Codes/Options:
TR / 1.5 k 7 " reel
TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
RthJA < 25 K/W, Tamb = 100 °C
Pdiss
3
W
RthJA < 100 K/W, Tamb = 50 °C
Pdiss
1.25
W
Non repetitive peak surge power tp = 10/1000 µs sq.pulse,
PZSM
300
W
dissipation
Tj = 25 °C prior to surge
Peak forward surge current
10 ms single half sine wave
IFSM
50
A
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction lead
RthJL
25
K/W
Junction ambient
mounted on epoxy-glass hard
RthJA
150
K/W
tissue, Fig. 1a
mounted on epoxy-glass hard
RthJA
125
K/W
tissue, Fig. 1b
mounted on Al-oxid-ceramic
RthJA
100
K/W
(Al2O3), Fig. 1b
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.5 A
Document Number 85594
Rev. 2.2, 15-Sep-05
Symbol
Min
Typ.
Max
Unit
VF
1.2
V
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