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BZT03D 데이터 시트보기 (PDF) - Vishay Semiconductors

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BZT03D Datasheet PDF : 5 Pages
1 2 3 4 5
BZT03D...
Vishay Telefunken
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D Glass passivated junction
D Hermetically sealed package
D Clamping time in picoseconds
Applications
Medium power voltage regulators and
medium power transient suppression circuits
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Power dissipation
Repetitive peak reverse power dissipation
Non repetitive peak surge power dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm, TL=25°C
Tamb=25°C
tp=100ms, Tj=25°C
Type
Symbol
PV
PV
PZRM
PZSM
Tj
Tstg
Value Unit
3.25
W
1.3
W
10
W
600
W
175
°C
–65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
46
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Test Conditions
Forward voltage
IF=0.5A
Type
Symbol Min Typ Max Unit
VF
1.2 V
Document Number 85600
Rev. 2, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

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