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BZW50-22BRL 데이터 시트보기 (PDF) - STMicroelectronics

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BZW50-22BRL Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Characteristics
BZW50
Figure 3.
Peak power dissipation vs. initial
junction temperature
(printed circuit board)
%
100
80
60
Figure 4. Peak pulse power vs. exponential
pulse duration
Ppp (W )
1E7
1E6
Tj initial(°C)
1E5
40
1E4
20
0
0
Tj initial(°C)
20 40 60 80 100 120 140 160 180 200
1E3
1E2
0.001
0.01
0.1
tp(ms)EXPO.
1
10
100
Figure 5. Clamping voltage vs. peak pulse
current(1)
VCL (V)
1000
BZW50-180
BZW50- 82
100
BZW50- 8329
BZW50- 128
% Ipp
100
50
Tj initial(°C)
0
tr tp
t
t r < 10 s
Figure 6.
Capacitance vs. reverse applied
voltage for unidirectional types
(typical values).
C (nF)
100
BZW 50-10
10 BZW 50-18
BZW 50-39
BZW 50-82
1
BZW 50-180
Tj= 25 °C
F = 1 MHz
BZW50- 120
10
0.1
1
Ipp (A)
10
100
1000
10000
0.11
V R (V)
10
100
500
1. The curves in Figure 5 are specified for a junction temperature of 25 °C before surge. The given results may be
extrapolated for other junction temperatures by using the following formula: VBR = T x [Tamb -25] x VBR(25 °C)
For intermediate voltages, extrapolate the given results.
Figure 7.
Capacitance vs. reverse applied
voltage for bidirectional types
(typical values)
C (nF)
100
10
BZW 50-10B
BZW 50-18B
BZW 50-39B
1 BZW 50-82B
BZW 50-180B
V R (V)
0.11
10
Tj= 25 °C
F = 1 MHz
100
500
1. Multiply by 2 for units with VBR > 220 V.
Figure 8.
Peak forward voltage drop vs. peak
forward current for unidirectional
types (typical value).(1)
4/8
Doc ID 2973 Rev 5

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