IRFF330 데이터 시트보기 (PDF) - Intersil
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IRFF330 Datasheet PDF : 7 Pages
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IRFF330
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF330
400
400
3.5
14
±20
25
0.2
300
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
400
-
-
V
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
-
4.0
V
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
25
µA
-
250
µA
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 3.5
-
-
A
Gate to Source Leakage Forward
IGSS VGS = ±20V
-
-
±100
nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 2.0A (Figures 8, 9)
-
0.8 1.000
Ω
Forward Transconductance (Note 2)
gfs
VDS = 10V, ID = 3.3A (Figure 12)
2.9
3.5
-
S
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(ON) ID ≈ 3.5A, RG = 9.1Ω, VGS = 10V, RL = 49Ω
-
-
30
ns
tr
VDD = 175V (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
-
-
35
ns
td(OFF) Temperature
-
-
55
ns
Fall Time
tf
-
-
35
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg(TOT) VGS = 10V, ID = 3.5A, IG(REF) = 1.5mA,
-
18
30
nC
VDS = 0.8V x Rated BVDSS (Figures 14, 19, 20)
Qgs
Gate Charge is Essentially Independent of
Operating Temperature
-
11
-
nC
Qgd
-
7.0
-
nC
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
700
-
pF
Output Capacitance
COSS
-
150
-
pF
Reverse Transfer Capacitance
CRSS
-
40
-
pF
Internal Drain Inductance
Internal Source Inductance
LD
Measured from the Drain Modified MOSFET
Lead, 5mm (0.2in) from Symbol Showing the
header to Center of Die Internal Device
LS
Measured from the
Source Lead, 5mm
Inductances
D
(0.2in) from Header to
LD
Source Bonding Pad
-
5.0
-
nH
-
15
-
nH
G
LS
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
5.0
oC/W
-
-
175
oC/W
2
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