IRFF330 데이터 시트보기 (PDF) - Intersil
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IRFF330 Datasheet PDF : 7 Pages
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IRFF330
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
ISD
ISDM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Rectifier.
D
G
MIN TYP
-
-
-
-
MAX
3.5
14
UNITS
A
A
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
VSD
trr
QRR
S
TJ = 25oC, ISD = 3.5A, VGS = 0V (Figure 13)
TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs
TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs
-
-
1.6
V
-
600
-
ns
-
4.0
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, start TJ = 25oC, L = 42.85mH, RG = 25Ω, peak IAS = 3.5A (Figures 14,15).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
4
3
2
1
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
10-5
PDM
SINGLE PULSE
10-4
10-3
10-2
0.1
T1, RECTANGULAR PULSE DURATION (LC)
t1 t2
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC(t) x RθJC + TC
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
3
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