C10T03QL 데이터 시트보기 (PDF) - Nihon Inter Electronics

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C10T03QL

Schottky Barrier Diode

Nihon Inter Electronics 

S B D T y p e : C10T03QL

FEATURES

*SQUARE-PAK TO-263AB(SMD)

Packaged in 24mm Tape and Reel

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*High Surge Capability

*Tj=150 °C operation

OUTLINE DRAWING

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Repetitive Peak Surge Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

VRRM

VRRSM

IO

IF(RMS)

IFSM

Tjw

Tstg

Approx Net Weight: 1.4g

C10T03QL

30

35(pulse width ≤ 1µs duty ≤ 1/50)

10

Tc=116°C

50 Hz Full Sine Wave

Resistive Load

11.1

120

50Hz Full Sine Wave ,1cycle

Non-repetitive

-40 to +150

-40 to +150

Unit

V

V

A

A

A

°C

°C

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

Symbol

Conditions

IRM

Tj= 25°C, VRM= VRRM

per arm

VFM

Tj= 25°C, IFM= 5 A

per arm

Rth(j-c) Junction to Case

Min. Typ. Max. Unit

-

-

5 mA

-

- 0.47 V

-

-

3 °C /W

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