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GL3276 데이터 시트보기 (PDF) - Hynix Semiconductor

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GL3276 Datasheet PDF : 4 Pages
1 2 3 4
GL3276A
Absolute Maximum Ratings(Ta=25 ¡ )É
SYMBOL
VCC
IOUT
PD
TOPR
TSTG
PARAMETER
Supply voltage
Output Current
Allowable power
dissipation
Operating temperature
Storage temperature
VALUE
6.0
2.5
270
- 20 to +75
-40 to +125
Recommended Operating Condition
SYMBOL
VCC
fIN
PARAMETER
Supply voltage
Input frequency
MIN
4.5
30
TYP
5.0
38
Electrical characteristics (VCC = 5.0V, Ta = 2.5¡ )É
MAX
5.5
80
UNIT
V
mA
mW
¡É
¡É
UNIT
V
KHz
SYMBOL
PARAMETER
TEST CONDITION MIN TYP MAX UNIT REMARK
ICC Supply current
VIN Input voltage
IIN = 0A
IIN=-330 µA
AV Voltage gain
fIN=38kHz
VIN=30 µVP-P
FBW BPF bandwidth
-3dB Bandwidth
VIN=30 µVP-P
rIN
Input impedance
fIN=38kHz CW
VIN=0.2 µVP-P
fIN=38kHz
tPW1
burstwave
Output pulse width
VIN=500 µVP-P
fIN=38kHz
tPW2
burstwave
VIN=50mVP-P
VOL
Low Level
output voltage
VOH
Low Level
output voltage
1.2
2.0 2.5
0.6 0.8
70 76
2.0 2.5
80 110
440
440
0.2
4.8 5.0
Note 1 : rIN =
47
(VIN VX)
K§ Ù(where VIN=input level, VX=test value)
1
2.8 mA
3.1
1.7
V
80 dB
3.0 KHz
160 K§ Ù note * 1
770 µS
note * 1
770 µS
0.4
V
V
2 : input burst
wave form
output pulse
600 µS 600 µS
38KHz Carrier
2

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