CEM4953A 데이터 시트보기 (PDF) - Chino-Excel Technology

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CEM4953A

Dual P-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

30

-VGS=10,9,8,7V

24

-VGS=6V

18

-VGS=5V

12

-VGS=4V

6

-VGS=3V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

Ciss

600

450

300

150

Coss

0 Crss

0

5

10

15

20

25

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

1.3

VDS=VGS

1.2 ID=-250µA

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

3

CEM4953A

10

25 C

8

6

5

4

TJ=125 C

2

-55 C

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2

ID=-5A

1.9 VGS=-10V

1.6

1.3

1.0

0.7

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

VGS=0V

101

100

10-1

0.4 0.6 0.8 1.0 1.2 1.4

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

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