CJD31C 데이터 시트보기 (PDF) - Central Semiconductor
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CJD31C Datasheet PDF : 2 Pages
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CJD31C NPN
CJD32C PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD31C, CJD32C
types are Complementary Silicon Power Transistors
manufactured by the epitaxial base process, mounted
in a surface mount package designed for power
amplifier and high speed switching applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
PD
TJ, Tstg
ΘJC
ΘJA
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEO
VCE=60V
ICES
VCE=100V
IEBO
VEB=5.0V
BVCEO
IC=30mA
100
VCE(SAT)
IC=3.0A, IB=375mA
VBE(ON)
VCE=4.0V, IC=3.0A
hFE
VCE=4.0V, IC=1.0A
25
hFE
VCE=4.0V, IC=3.0A
10
fT
VCE=10V, IC=500mA, f=1.0MHz
3.0
hfe
VCE=10V, IC=500mA, f=1.0kHz
20
100
100
5.0
3.0
5.0
1.0
15
1.56
-65 to +150
8.33
80.1
UNITS
V
V
V
A
A
A
W
W
°C
°C/W
°C/W
MAX
50
20
1.0
1.2
1.8
50
UNITS
µA
µA
mA
V
V
V
MHz
R2 (4-January 2010)
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